MSCSM170HRM233AG
MOSFET 4N-CH 1700V/1200V 124A
MSCSM170HRM233AG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 175°C (TJ)
Technology：
Silicon Carbide (SiC)
Configuration：
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss)：
1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
124A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs：
22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：
3.2V @ 5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：
356nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
6600pF @ 1000V, 3020pF @ 1000V
Power - Max：
602W (Tc), 395W (Tc)
