MSCSM120HRM08NG
MOSFET 4N-CH 1200V/700V 317A
MSCSM120HRM08NG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 175°C (TJ)
Technology：
Silicon Carbide (SiC)
Configuration：
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss)：
1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C：
317A (Tc), 227A (Tc)
Rds On (Max) @ Id, Vgs：
7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：
2.8V @ 12mA, 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：
928nC @ 20V, 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
12100pF @ 1000V, 9000pF @ 700V
Power - Max：
1.253kW (Tc), 613W (Tc)
