MSCSM120X10CTYZBNMG
MOSFET 6N-CH 1200V 28A
MSCSM120X10CTYZBNMG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
Module
Configuration：
6 N-Channel (3-Phase Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
28A (Tc), 49A (Tc)
Rds On (Max) @ Id, Vgs：
100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：
2.8V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：
64nC @ 20V, 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
838pF @ 1000V, 1990pF @ 1000V
Power - Max：
116W (Tc), 196W (Tc)
