MSCSM170HRM11NG
MOSFET 4N-CH 1700V/1200V 226A
MSCSM170HRM11NG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 175°C (TJ)
Technology：
Silicon Carbide (SiC)
Configuration：
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss)：
1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
226A (Tc), 163A (Tc)
Rds On (Max) @ Id, Vgs：
11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：
3.2V @ 10mA, 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：
712nC @ 20V, 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
13200pF @ 1000V, 6040pF @ 1000V
Power - Max：
1.012kW (Tc), 662W (Tc)
