MSCSM170HRM075NG
MOSFET 4N-CH 1700V/1200V 337A
MSCSM170HRM075NG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 175°C (TJ)
Technology：
Silicon Carbide (SiC)
Configuration：
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss)：
1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
337A (Tc), 317A (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id：
3.2V @ 15mA, 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：
1068nC @ 20V, 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
19800pF @ 1000V, 12100pF @ 1000V
Power - Max：
1.492kW (Tc)
