MSCSM120HM31T3AG
MOSFET 4N-CH 1200V 89A
MSCSM120HM31T3AG Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
FET Feature：
-
Package / Case：
Module
Current - Continuous Drain (Id) @ 25°C：
89A (Tc)
Operating Temperature：
-40°C ~ 175°C (TJ)
Configuration：
4 N-Channel (Full Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Rds On (Max) @ Id, Vgs：
31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs：
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：
3020pF @ 1000V
Power - Max：
395W (Tc)
Vgs(th) (Max) @ Id：
2.8V @ 3mA
