Technology:
Silicon Carbide (SiC)
配置:
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss):
1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
64A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs:
45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Vgs(th)(最大值)@Id:
3.2V @ 2.5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
3300pF @ 1000V, 3020pF @ 1000V
Power - Max:
319W (Tc), 395W (Tc)