Technology:
Silicon Carbide (SiC)
配置:
4 N-Channel (Three Level Inverter)
Drain to Source Voltage (Vdss):
1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C:
472A (Tc), 442A (Tc)
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
Vgs(th)(最大值)@Id:
2.8V @ 18mA, 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:
1392nC @ 20V, 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
18100pF @ 1000V, 18000pF @ 700V
Power - Max:
1.846kW (Tc), 1.161kW (Tc)