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ICPB2002-1-110I
DC-12 GHZ 12W DISCRETE GAN HEMT
part Number：
ICPB2002-1-110I
manufacturer：
Roving Networks (Microchip Technology)
category：
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF FETs, MOSFETs >
describe：
DC-12 GHZ 12W DISCRETE GAN HEMT
RoHS：
NO
：
ICPB2002-1-110I    
ICPB2002-1-110I specifications
Mounting Type：
Surface Mount
Voltage - Rated：
28 V
Current Rating (Amps)：
1A
Package / Case：
Die
Supplier Device Package：
Die
Voltage - Test：
28 V
Frequency：
12GHz
Power - Output：
12W
Gain：
10dB
Technology：
GaN HEMT
Current - Test：
125 mA
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Standard Pack Quantity：1600
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