MSCSM120VR1M11CT6AG
SIC 2N-CH 1200V 251A
part Number:
MSCSM120VR1M11CT6AG
manufacturer:
Roving Networks (Microchip Technology)
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
SIC 2N-CH 1200V 251A
RoHS:
YES
MSCSM120VR1M11CT6AG specifications
Mounting Type:
Chassis Mount
Package / Case:
Module
Operating Temperature:
-40°C ~ 175°C (TJ)
Technology:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Configuration:
2 N Channel (Phase Leg)
Vgs(th) (Max) @ Id:
2.8V @ 9mA
Current - Continuous Drain (Id) @ 25°C:
251A (Tc)
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs:
696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
9000pF @ 1000V
Power - Max:
1.042kW (Tc)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1600
quantity
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626.84
626.84
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