ICPB2002-1-110I

DC-12 GHZ 12W DISCRETE GAN HEMT

ICPB2002-1-110I
Part Number:
ICPB2002-1-110I
Manufacturer:
Microchip Technology
Category:
RF FETs, MOSFETs
Description:
DC-12 GHZ 12W DISCRETE GAN HEMT
RoHS:
YES
Datasheet:
PDF
Manufacturer Standard Lead Time:
TBD
Standard Pack Quantity:
0

ICPB2002-1-110I Specifications

Part Status:
Active
Mounting Type:
Surface Mount
Current Rating (Amps):
1A
Configuration:
-
Noise Figure:
-
Package / Case:
Die
Supplier Device Package:
Die
Voltage - Rated:
28 V
Gain:
10dB
Voltage - Test:
28 V
Power - Output:
12W
Frequency:
12GHz
Current - Test:
125 mA
Technology:
GaN HEMT

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