2N3506L

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2N3506L

NPN POWER SILICON TRANSISTORS

part Number：

2N3506L

manufacturer：

Roving Networks (Microchip Technology)

category：

Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors >

describe：

NPN POWER SILICON TRANSISTORS

RoHS：

：

2N3506L 2N3506L 2N3506L 2N3506L

2N3506L specifications

Mounting Type：

Through Hole

Power - Max：

1 W

Voltage - Collector Emitter Breakdown (Max)：

40 V

Transistor Type：

NPN

Current - Collector (Ic) (Max)：

3 A

Operating Temperature：

-65°C ~ 200°C (TJ)

Current - Collector Cutoff (Max)：

1µA

Vce Saturation (Max) @ Ib, Ic：

1.5V @ 250mA, 2.5A

Package / Case：

TO-205AA, TO-5-3 Metal Can

Supplier Device Package：

TO-5AA

DC Current Gain (hFE) (Min) @ Ic, Vce：

50 @ 500mA, 1V

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