Roving Networks (Microchip Technology)
1N5813R
DIODE GEN PURP 75V 20A DO203AA
1N5813R specifications
Speed：
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)：
20A
Operating Temperature - Junction：
-65°C ~ 175°C
Reverse Recovery Time (trr)：
35 ns
Mounting Type：
Stud Mount
Package / Case：
DO-203AA, DO-4, Stud
Voltage - DC Reverse (Vr) (Max)：
75 V
Technology：
Standard, Reverse Polarity
Supplier Device Package：
DO-203AA (DO-4)
Voltage - Forward (Vf) (Max) @ If：
950 mV @ 20 A
Capacitance @ Vr, F：
300pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr：
10 µA @ 75 V
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